MA2J111 |
RFQ for MA2J111 Required Field |
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| Technical/Catalog Information | MA2J1110GL |
| Vendor | Panasonic - SSG (VA) |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 80V |
| Current - Average Rectified (Io) | 100mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 100mA |
| Reverse Recovery Time (trr) | 3ns |
| Current - Reverse Leakage @ Vr | 100nA @ 75V |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Mounting Type | Surface Mount |
| Package / Case | S-Mini 2P |
| Packaging | Digi-Reel? |
| Capacitance @ Vr, F | 1.2pF @ 0V, 1MHz |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MA2J1110GL MA2J1110GL MA2J1110GLDKR ND MA2J1110GLDKRND MA2J1110GLDKR |
| Product | Manufacturers | Pack | D/C |
| MA2J111 | - | SOD523 | N/A |
Features |
| • Small S-mini type package, allowing high-density mounting• Short reverse recovery time trr• Small terminal capacitance, Ct• High breakdown voltage (VR = 80 V) |
| Parameter | Symbol | Symbol | Unit |
| Reverse voltage (DC) | VR | 80 | V |
| Peak reverse voltage | VRM | 80 | V |
| Average forward current | IF(AV) | 100 | mA |
| Peak forward current | IFM | 225 | mA |
| Non-repetitive peak forward surge current* | IFSM | 500 | mA |
| Junction temperature | Tj | 150 | |
| Storage temperature | Tstg | −55 to +150 |
